FDMC86160ET100
Overview
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance.
- Extended TJ Rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
- Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A
- High Performance Technology for Extremely Low rDS(on)
- Termination is Lead-free and RoHS Compliant
