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FDMC86160ET100 - N-Channel MOSFET

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance.

Features

  • Extended TJ Rating to 175°C.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A.
  • Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A.
  • High Performance Technology for Extremely Low rDS(on).
  • Termination is Lead.
  • free and RoHS Compliant.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 43 A, 14 mW FDMC86160ET100 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS (on) is required in small spaces such as High performance VRM, POL and orring functions. Features • Extended TJ Rating to 175°C • Shielded Gate MOSFET Technology • Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A • Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A • High Performance Technology for Extremely Low rDS(on) • Termination is Lead−free and RoHS Compliant Applications • Bridge Topologies • Synchronous Rectifier DATA SHEET www.onsemi.
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